Program/erase injection current characteristics of a low-voltage low-power NROM using high-K materials as the tunnel dielectricYIMAO CAI; RU HUANG; XIAONAN SHAN et al.Semiconductor science and technology. 2006, Vol 21, Num 4, pp 507-512, issn 0268-1242, 6 p.Article

A novel dual-doping floating-gate (DDFG) flash memory featuring low power and high reliability applicationYAN LI; RU HUANG; YIMAO CAI et al.IEEE electron device letters. 2007, Vol 28, Num 7, pp 622-624, issn 0741-3106, 3 p.Article

LaAlO₃ as tunnel dielectric for low-voltage and low-power p-channel flash memory free of drain disturbYIMAO CAI; RU HUANG; XIAONAN SHAN et al.Solid-state electronics. 2006, Vol 50, Num 2, pp 276-281, issn 0038-1101, 6 p.Article

A novel source/drain on void (SDOV) MOSFET implemented by local co-implantation of hydrogen and heliumDAKE WU; RU HUANG; WEIHAI BU et al.Microelectronic engineering. 2008, Vol 85, Num 7, pp 1490-1494, issn 0167-9317, 5 p.Article

A novel vertical channel self-aligned split-gate flash memoryDAKE WU; FALONG ZHOU; RU HUANG et al.Solid-state electronics. 2009, Vol 53, Num 2, pp 124-126, issn 0038-1101, 3 p.Article

VDNROM : A novel four-physical-bits/cell vertical channel dual-nitride-trapping-layers ROM for high density flash memory applicationsFALONG ZHOU; YIMAO CAI; RU HUANG et al.Solid-state electronics. 2007, Vol 51, Num 11-12, pp 1547-1551, issn 0038-1101, 5 p.Conference Paper